www.irf.com 1 06/03/09 features: rugged, light weight near hermetic package with integrated power terminals gen iv igbt technology soft recovery rectifier diodes ultra low thermal resistance zener gate protection diodes very low conduction and switching losses -55c to +125c operation screening to meet the intent of mil-prf-38534 short circuit capability 2.0 ohms series gate resistor high altitude operation, 85,000 feet above sea level at rated voltage hirel tm int-a-pak 3, plastic G150SPBK06P3H full-bridge igbt module the hirel tm int-a-pak series are isolated near hermetic power modules which combine the latest igbt and soft recovery rectifier technology. they use both high-speed and low vce(sat) igbt for ultra low thermal resistance.the G150SPBK06P3H consists of six igbts and six freds in a full-bridge configuration and has an scr inrush current limiter. hirel tm int-a-pak 3 thermal resistance measurements are at steady state condition. thermal-mechanical specifications parameter symbol min typ max units igbt thermal resistance, junction to case, per switch -0.2 0.24 inverter bridge diode thermal resistance, junction to case, per switch -0.38 0.45 regen diode thermal resistance, junction to case, per switch -0.6 0.80 scr thermal resistance, junction to case -0.21 0.27 operating junction temperature range t j -55 - 150 storage temperature range t stg -55 - 125 screw torque - mounting screw torque - terminals module weight --410g r thjc c/w c t26in-lbs -- product summary part number v ce i c G150SPBK06P3H 600v 150a 2.3v typ. 2.6v max. v ce(sat) pd-97398
2 www.irf.com G150SPBK06P3H absolute ratings module characteristics symbol parameter test conditions ratings units t = 1 min @ sea level v rms voltage isolation terminals to case 2,500 v (all terminals shorted together) t c o p eratin g case tem p erature t stg storage temperature igbt characteristics symbol parameter test conditions ratings units v ce ( br ) igbt collector to emitter breakdown volta g e v ge = 0v, t j = +25c to +150c 600 v cg collector to gate voltage 600 v v ge gate to emitter volta g e20 i cc collector current continuous v ge = 15v, t c = +25c 150 i cm collector current pulsed t p = 1.0ms, t c = +25c 300 t sc short circuit withstand time v ce = 400v, v ge = 15v, t j = +150c 10 (min) s t j operating junction temperature -55 to +150 c diode characteristics symbol parameter test conditions ratings units v drm / vrrm max. repetitive peak and off-state voltage t j = +125c 600 v i f forward current t c = +25c 150 i fm forward surge current t p = 1.0ms, t c = +25c 300 t j operating junction temperature -55 to +150 c scr characteristics symbol parameter test conditions ratings units v drm / vrrm max. repetitive peak and off-state voltage t j = +25c 600 v i t ( dc ) max. continuous forward current t j = +80c 100 i tsm max. peak surge current 1/2 cycle @ 60hz 500 t j operating junction temperature -55 to +150 c a -55 to +125 c t j = +25c to +150c a a current ratings apply to the free wheeling diodes and not the regen diodes
www.irf.com 3 G150SPBK06P3H static characteristics module symbol parameter test conditions min typ max units r i insulation resistance from all pins to case, v = 500v dc 10 - - m ? igbt symbol parameter test conditions min typ max units i ces collector current v ce = v ces , v ge = 0v -- 1.0 ma i ges gate leakage current v ge = v ges , v ce = 0v - - 10 a v ge ( th ) gate-emitter threshold volta g e i c = 15ma, v ce = 10v 4.0 5.4 8.1 i c = 150a, v ge = 15v - 2.3 2.6 v i c = 75a, v ge = 15v -1.8 2.1 diode symbol parameter test conditions min typ max units bridge diodes, i e = 150a, v ge = 0v -1.8 2.1 regen diodes, i e = 50a, v ge = 0v - - 2.4 scr symbol parameter test conditions min typ max units i rrm max. peak reverse leakage current v rrm = 600v - - 15 i drm max. peak off-state leaka g e current v drm = 600v -- 15 i f = 100a - - 1.35 i f = 50a -- 1.15 i h holding current dc method, bias condition c - 200 300 ma dynamic characteristics igbt symbol parameter test conditions min typ max units q g total gate charge v cc = 300v, i c = 150a, v ge = 15v - - 1600 nc t d ( on ) turn on dela y time v cc = 300v, i c = 150a -- 1200 ns t r rise time v ge1 = v ge2 = 15v - - 850 ns t d ( off ) turn off delay time r g = 20 ? , turn-on -- 2.1 s t f fall time r g = 10 ? , turn-off - - 300 ns diode symbol parameter test conditions min typ max units t r r diode reverse recovery time i e = 150a, di/dt = 300a/ s min - - 170 ns q r r diode reverse recovery charge bridge diodes only - - 9.0 c v ce(sat) collector-emitter saturation voltage forward on-state voltage v fm diode forward voltage v v ma v tm
4 www.irf.com G150SPBK06P3H case outline- hirel tm int-a-pak 3 notes: 1) all dimensions are in inches 2) unless otherwise specified, tolerances .xx = 0 .01, .xxx = 0.005 circuit diagram - hirel tm int-a-pak 3 er dc(-) gr vr8 vr7 r4 2 scr a reg scr c scr g scr a dc(+) scr q8 q6 d6 q2 e2a vr9 vr10 g2a d2 e1a g1a vr5 vr6 d1 q1 a e2b vr12 vr11 vr3 g2b e1b vr4 g1b q3 d3 q7 b e2c vr13 vr14 d4 g2c e1c g1c vr1 vr2 q4 q5 c r3 r2 r1 r7 r6 r5 d7 d5 22 2 22 2
www.irf.com 5 G150SPBK06P3H world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir leominster: 205 crawford st., leominster, massachusetts 01453, tel: (978) 534-5776 data and specifications subject to change without notice. 06/2009 part numbering nomenclature g 150 sp b k 06 p3 h igbt module current capability 150 = 150 amps generation igbt / fwd configuration b = gen 4 / gen 3 screening level h = military grade screened per mil-prf-38534 voltage 06 = 600v circuit configuration sp = seven plus igbt speed / sc capability k = fast, sc capable package type p3 = hirel tm int-a-pak 3 2.84" x 5.0" x 1.0"
|
